TOF-SIMS二次離子光學(xué)系統(tǒng)仿真研究
中國測試劉曉旭1， 齊國臣1， 包澤民1， Stephen Clement2， 邱春玲1， 田 地1， 龍
摘 要：為實(shí)現(xiàn)飛行時(shí)間二次離子質(zhì)譜儀（TOF-SIMS）對二次離子束的提取并提高儀器的調(diào)試效率，采用離子光學(xué)仿真軟件SIMION 8.0對TOF-SIMS二次離子光學(xué)系統(tǒng)進(jìn)行仿真。以穩(wěn)定同位素銅離子為對象，通過仿真，研究二次離子光學(xué)系統(tǒng)中二次離子提取系統(tǒng)透鏡電極電壓的調(diào)整對質(zhì)量分辨率的影響，確定最佳透鏡電極電壓組合,并得到穩(wěn)定同位素銅離子的仿真譜圖。仿真研究表明：當(dāng)初級提取電極電壓為800 V、單透鏡有效電極電壓為-4 400 V時(shí)，質(zhì)量分辨率最高。在TOF-SIMS實(shí)驗(yàn)平臺上對銅樣品靶進(jìn)行實(shí)驗(yàn)測試，實(shí)驗(yàn)與仿真結(jié)果相吻合，表明設(shè)計(jì)的二次離子光學(xué)系統(tǒng)可用于TOF-SIMS儀器的二次離子束提取，為實(shí)驗(yàn)參數(shù)的選擇提供參考，從而提高儀器調(diào)試效率。
關(guān)鍵詞：飛行時(shí)間二次離子質(zhì)譜儀；二次離子光學(xué)系統(tǒng)；仿真；透鏡電極電壓；質(zhì)量分辨率
文獻(xiàn)標(biāo)志碼：A 文章編號：1674-5124（2016）01-0130-04
Simulation research of secondary ion optical system in TOF-SIMS
LIU Xiaoxu1， QI Guochen1， BAO Zemin1， Stephen Clement2， QIU Chunling1， TIAN Di1， LONG Tao2
（1. College of Instrumentation and Electrical Engineering，Jilin University，Changchun 130022，China；
2. Institute of Geology，Chinese Academy of Geological Science，Beijing 100037，China）
Abstract: In order to extract secondary ion beams with TOF-SIMS and improve its commissioning efficiency， this paper has simulated the secondary ion optical system in TOF-SIMS based on ion optical simulation software SIMION 8.0. Taking stable isotopic copper ions as the study objects， this paper simulated what would happen to the mass resolution after the adjustment of electrode voltage in the secondary ion extraction system， determined the best combination of electrode voltage in lens， and obtained the simulation spectrum for stable isotopic copper ion. The study reveals that the highest mass resolution can be achieved when the voltage on the primary extraction electrode is 800 V and the voltage on the effective electrode in the einzel lens is-4 400 V. After that， experiments are conducted to test the copper sample target on a TOF-SIMS experimental platform. The results are consistent with those gained by simulation， which indicates that this system can be used for extracting secondary ion beams in TOF-SIMS and the simulation test can provide a reference selecting experimental parameters to increase the equipment commissioning efficiency.
Keywords: TOF-SIMS； secondary ion optical system； simulation； voltages of electrodes in lens； mass resolution
