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  • 三菱功放模塊 RA07H0608M
  • 價(jià)格:面議
  • 品牌:MITSUBISHI
  • 產(chǎn)品簡(jiǎn)介:
  • RA07H0608M是7-watt RF的MOSFET放大器模塊為12.5-volt,在68-合作,88-MHz范圍內(nèi)的行動(dòng)收音機(jī).電池可以直接連接到漏極增強(qiáng)型MOSFET晶體管.如果沒有門電壓(VGG進(jìn)排水=0V),只是一個(gè)很小的泄漏電流與輸入信號(hào)衰減的RF高達(dá)60 dB.輸出功率作為柵極和漏極電壓增加電流增加.隨著gate voltage around 4V (minimum), output power an

    產(chǎn)品詳情商家聯(lián)系電話:86-0755-83996702
    RA07H0608M是7-watt RF的MOSFET放大器模塊為12.5-volt,在68-合作,88-MHz范圍內(nèi)的行動(dòng)收音機(jī).電池可以直接連接到漏極增強(qiáng)型MOSFET晶體管.如果沒有門電壓(VGG進(jìn)排水=0V),只是一個(gè)很小的泄漏電流與輸入信號(hào)衰減的RF高達(dá)60 dB.輸出功率作為柵極和漏極電壓增加電流增加.隨著gate voltage around 4V (minimum), output power and drain current大幅增加.額定輸出功率變?yōu)榭稍?.5V(典型值)和5V(最大).在VGG=5V,典型柵極電流1 mA.該模塊是專為非線性調(diào)頻調(diào)制,但可能也可用于線性調(diào)制通過設(shè)置靜態(tài)漏電流隨柵極電壓和輸出功率控制輸入功率.

    特征
    •增強(qiáng)型MOSFET晶體管(IDD≅0@ VDD=12.5V, VGG=0V)
    • Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW
    •ηT>38% @ Pout=7W (VGG控制),VDD=12.5V, Pin=30mW
    •寬帶頻率范圍:68-88MHz
    •低功耗控制電流IGG=1mA (typ)在VGG=5V
    •模塊尺寸:30 x 10 x 5.4 mm
    •線性操作有可能通過設(shè)置靜態(tài)漏電流同門電壓和輸出功率的控制輸入功率
    RA07H0608M: Silicon RF Power Semiconductors RoHS Compliance ,68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO
    DESCRIPTION
    The RA07H0608M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 68- to 88-MHz range. The battery can be connected directly to the drain of the
    enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

    FEATURES
    • Enhancement-Mode MOSFET Transistors VDD=12.5V, VGG=0V)
    • Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW
    • hT>38% @ Pout=7W (VGG control), VDD=12.5V, Pin=30mW
    • Broadband Frequency Range: 68-88MHz
    • Low-Power Control Current IGG=1mA (typ) at VGG=5V
    • Module Size: 30 x 10 x 5.4 mm
    • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANT
    • RA07H0608M-101 is a RoHS compliant products.
    • RoHS compliance is indicate by the letter “G” after the Lot Marking.
    • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.How ever, it applicable to the following exceptions of RoHS Directions.
    1.Lead in the Glass of a cathode-ray tube, electronic parts, andfluorescent tubes.
    2.Lead in electronic Ceramic parts.
    ORDERING INFORMATION:
    ORDER NUMBER: RA07H0608M-101
    SUPPLY FORM: Antistatic tray,50 modules/tray
    廠商資料
    三菱射頻模塊及功率管,Honeywell全系列傳感器和變送器,日本科索電源模塊,微波射頻器件等。
    廠商動(dòng)態(tài)
     
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