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RA35H1516M是40-watt RF的MOSFET放大器模塊12.5-volt移動電臺在向工作在154-162-MHz范圍.電池可以直接連接到漏極增強(qiáng)型MOSFET晶體管.如果沒有門電壓(VGG進(jìn)入=0V),只有一小漏電流排水和輸入信號衰減的RF高達(dá)60 dB.輸出功率和漏電流增加門極電壓上升.與周圍4V（最低），輸出功率和電壓門漏電流大幅增加.額定輸出功率變在4.5V（典型值）和5V（最大）提供.在VGG=5V,的典型柵極電流1 mA.該模塊是專為非線性調(diào)頻調(diào)制，但可能也可用于線性調(diào)制通過設(shè)置靜態(tài)漏電流隨柵極電壓和輸出功率控制輸入功率.
特征
•增強(qiáng)型MOSFET晶體管(IDD≅0@ VDD=12.5V, VGG=0V)
• Pout>40W,ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW
•低功耗控制電流IGG=1mA (typ)在VGG=5V
•模塊尺寸：66 x 21 x 9.88 mm
•線性操作有可能通過設(shè)置靜態(tài)漏電流隨柵極電壓和輸出功率控制與輸入功率
RA35H1516M：Silicon RF Power Modules RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage(VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially.The nominal output power becomes available at 4.5V (typical) and 5V(maximum). At VGG=5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors(IDD?0 @ VDD=12.5V, VGG=0V)
• Pout>40W, ?T>50% @ VDD=12.5V, VGG=5V, Pin=50mW
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE
• RA35H1516M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER：RA35H1516M-101
SUPPLY FORM：Antistatic tray,10 modules/tray
深圳浩時健電子有限公司是國內(nèi)三菱射頻電子元器件專業(yè)供應(yīng)商，三菱射頻產(chǎn)品廣泛應(yīng)用用于移動通信基站、直放站、衛(wèi)星通信、有線電視、雷達(dá)、無線本地環(huán)等領(lǐng)域。積極向國內(nèi)生產(chǎn)和科研單位推薦新產(chǎn)品：日本三菱公司生產(chǎn)的系列射頻功率放大模塊、系列射頻場效應(yīng)三極管。多年以來已為國內(nèi)眾多的生產(chǎn)廠家、科研院所、大專院校、國家重要單位維修部門的生產(chǎn)、維修、研制開發(fā)新品、教學(xué)實驗等提供了準(zhǔn)確、快捷、方便的配套供貨服務(wù)。在經(jīng)營運(yùn)作上,我公司批發(fā)、零售兼營，可向用戶長期保證貨源，并保證供貨品種的技術(shù)指標(biāo)滿足相關(guān)的國際檢測標(biāo)準(zhǔn)。
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三菱（MITSUBISHI）：（射頻功率放大模塊）
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本公司長期經(jīng)營日本MITSUBISHI三菱全系列射頻功率放大模塊，保證全新原裝，正品現(xiàn)貨，最新批號無鉛環(huán)保，假一罰十。深圳、香港公司備有大量現(xiàn)貨庫存，可提供樣品，現(xiàn)特價熱賣中。
